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Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures

Journal of Crystal Growth, 2007, Vol.301, pp.731-734 [Peer Reviewed Journal]

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The Kondo effect observed up to TK80 K in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

Journal of Crystal Growth, 15 Mar. 2009, Vol.311(7), pp.1795-1798 [Peer Reviewed Journal]

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High Kondo temperature (TK ~ 80 K) in self-assembled InAs quantum dots laterally coupled to nanogap electrodes

arXiv.org, Aug 19, 2008 [Peer Reviewed Journal]

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by this Author/Contributor:

  1. Hirakawa, K
  2. Shibata, K
  3. Sakaki, H
  4. K. Hirakawa
  5. Ishida, S

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