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Refined by: subject: Engineering remove journal title: Solid State Electronics remove author: Flandre, D. remove
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Computational study of dopant segregated nanoscale Schottky barrier MOSFETs for steep slope, low SD-resistance and high on-current gate-modulated resonant tunneling FETs

Solid State Electronics, November 2011, Vol.65-66, pp.123-129 [Peer Reviewed Journal]

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Physics of Gate Modulated Resonant Tunneling (RT)-FETs: Multi-barrier MOSFET for steep slope and high on-current

Solid State Electronics, 2011, Vol.59(1), pp.50-61 [Peer Reviewed Journal]

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