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Reliability of thin thermally grown SiO 2 on 3C-SiC studied by scanning probe microscopy

Materials Science Forum, 2010, Vol.645-648, pp.833-836 [Peer Reviewed Journal]

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Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors
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Fowler-Nordheim tunneling at SiO2/4H-SiC interfaces in metal-oxide-semiconductor field effect transistors

Applied Physics Letters, 2014 Oct 6, Vol.105(14) [Peer Reviewed Journal]

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Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures
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Poole-Frenkel emission in epitaxial nickel oxide on AlGaN/GaN heterostructures

Applied Physics Letters, 2012 Oct 22, Vol.101(17) [Peer Reviewed Journal]

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Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements
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Near interface traps in SiO2/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Applied Physics Letters, 2016 Jul 4, Vol.109(1) [Peer Reviewed Journal]

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Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC
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Negative charge trapping effects in Al2O3 films grown by atomic layer deposition onto thermally oxidized 4H-SiC

Aip Advances, 2016 Jul, Vol.6(7) [Peer Reviewed Journal]

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Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties
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Conduction Mechanisms at Interface of AIN/SiN Dielectric Stacks with AIGaN/GaN Heterostructures for Normally-off High Electron Mobility Transistors: Correlating Device Behavior with Nanoscale Interfaces Properties

Acs Applied Materials & Interfaces, 2017 Oct 11, Vol.9(40), pp.35383-35390 [Peer Reviewed Journal]

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by this Author/Contributor:

  1. Roccaforte, Fabrizio
  2. Fiorenza, Patrick
  3. Roccaforte, F.
  4. Fiorenza, P.
  5. Giannazzo, Filippo

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