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Refined by: journal title: IEEE journal of solid-state circuits. remove subject: ISSCC remove author: Choi, B. G. remove
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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Lee, K.-J. et al.

IEEE journal of solid-state circuits.; IEEE international solid state circits conference (ISSCC); San Francisco, CA, 2007; Feb, 2008, 150-162 -- IEEE; 2008 (pages 150-162) -- 2008

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A 0.1-mum 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Kang, S. et al.

IEEE journal of solid-state circuits.; International solid-state circuits conference; San Francisco, CA, 2006; Feb, 2007, 210-218 -- IEEE,; 2007 Part: Part 1; (pages 210-218) -- 2007

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  1. Park, M. H.  (1)
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by this Author/Contributor:

  1. Cho, B. H.
  2. Cho, W. Y.
  3. Choi, B. G.
  4. Lee, K. J.
  5. Lee, C. S.

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  1. SOLID-STATE CIRCUITS
  2. IEEE

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