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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Lee, K.-J. et al.

IEEE journal of solid-state circuits.; IEEE international solid state circits conference (ISSCC); San Francisco, CA, 2007; Feb, 2008, 150-162 -- IEEE; 2008 (pages 150-162) -- 2008

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by this Author/Contributor:

  1. Cho, B. H.
  2. Wang, Q.
  3. Cho, W. Y.
  4. Choi, B. G.
  5. Lee, K. J.

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  1. ISSCC
  3. IEEE

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