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Enhancing analog performance and suppression of subthreshold swing using hetero-junctionless double gate tunnel FETs

Proceeding - IEEE International Conference on Computing, Communication and Automation, ICCCA 2017, 19 December 2017, Vol.2017-, pp.1449-1452

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Steep subthreshold swing analysis of dual metal drain dopingless double gate tunnel FETs based on ge-source with high-k for low power applications

Proceeding - IEEE International Conference on Computing, Communication and Automation, ICCCA 2017, 19 December 2017, Vol.2017-, pp.1445-1448

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TCAD simulations of dual gate dopingless tunnel field effect transistor with spacer

RTEICT 2017 - 2nd IEEE International Conference on Recent Trends in Electronics, Information and Communication Technology, Proceedings, 12 January 2018, Vol.2018-, pp.364-367

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TCAD simulations of dual gate N+ pocket based dopingless tunnel field effect transistor

2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT), May 2017, pp.1592-1595

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