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Conference Proceeding
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Influence of the C/Si ratio on the dopant concentration and defects in CVD grown 3C-SiC homoepitaxial layers

AIP Conference Proceedings, 2010, Vol.1292, pp.31-34 [Peer Reviewed Journal]

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Splitting of close N-Al donor-acceptor-pair spectra in 3C-SiC

AIP Conference Proceedings, 2010, Vol.1292, pp.111-114 [Peer Reviewed Journal]

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Effects of growth conditions on the low temperature photoluminescence spectra of (111) 3C-SiC layers grown by chemical vapor deposition on 3C-SiC seeds grown by the vapor-liquid-solid technique

AIP Conference Proceedings, 2010, Vol.1292, pp.119-122 [Peer Reviewed Journal]

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by this Author/Contributor:

  1. Jegenyes, N
  2. Juillaguet, S
  3. Ferro, G
  4. Zoulis, G
  5. Camassel, J

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