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Macroscopic Modeling for Vapor Deposition Processes: From Purely Thermodynamic to Coupled Heat/Mass Transfer - Thermodynamic Models

Blanquet, E. et al.

Meeting abstracts / Electrochemical Society.; Electrochemical Society; Boston; MA, 1998; Nov, 1998, 838 -- Electrochemical Society; 1998 -- 1998

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A thermodynamic and experimental approach to ReSi~2 LPCVD

Dutron, A.-M. et al.

Thin solid films. VOL 259; NUMBER 1, ; 1995, 25 -- ELSEVIER SEQUOIA SA Part: Part 1; -- 1995

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Thermodynamic Calculations as the Basis for CVD Production of Silicide Coatings

Bernard, C. et al.

MRS bulletin. VOL 24; NUMBER 4, ; 1999, 27-31 -- MRS MATERIALS RESEARCH SOCIETY (pages 27-31) -- 1999

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Combined thermodynamic and mass transport modeling for material processing from the vapor phase

Pons, M. et al.

Thin solid films. VOL 365; NUMBER 2, ; 2000, 264-274 -- ELSEVIER SEQUOIA SA (pages 264-274) -- 2000

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Application of equilibrium thermodynamics to the development of diffusion barriers for copper metallization (invited)

Ramberg, C.E. et al.

Microelectronic engineering. VOL 50; NUMBER 1-4, ; 2000, 357-368 -- ELSEVIER (pages 357-368) -- 2000

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Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics

Dutron, A.-M. et al.

Journal de physique. IV, Colloque.; Chemical vapour deposition; Venice; Italy, 1995; Sep, 1995, C5-1141-C5-1148 -- Les Editions de Physique; 1995 Part: Part 5//; (pages C5-1141) -- 1995

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Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics

Dutron, A.-M. et al.

CHEMICAL VAPOUR DEPOSITION -EUROPEAN CONFERENCE-.; Chemical vapour deposition; Venice; Italy, 1995; Sep, 1995, C5-1141-C5-1148 -- Les Editions de Physique; 1995 Part: Part 10//; (pages C5-1141) -- 1995

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Morphology and Thermal Stability of Me-Si-N (Me=Re, W, Ta) for Microelectronics

Dutron, A.-M. et al.

Journal de physique. IV, Colloque. VOL 5; NUMBER 5//V2, ; 1995, C5-1141 -- EDITIONS DE PHYSIQUE Part: Part 5//; (pages C5-1141) -- 1995

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Free Growth of 4H-SiC by Sublimation Method

Dedulle, J. M. et al.

Materials science forum. VOL 457/460; PART 1, ; 2004, 71-74 -- Transtec Publications; 1999 (pages 71-74) -- 2004

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Different macroscopic approaches to the modelling of the sublimation growth of SiC single crystals

Pons, M. et al.

Materials science and engineering. B, Solid-state materials for advanced technology.; High temperature electronics: materials, devices and applications; Strasbourg; France, 1994; Jun, 1997, 308-312 -- Elsevier; 1997 Part: Part 1/3; (pages 308-312) -- 1997

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by this Author/Contributor:

  1. Blanquet, E.
  2. Madar, R
  3. Pons, M.
  4. Bernard, C
  5. Dedulle, J.-M.

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