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Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures
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Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures

Journal Of Crystal Growth, 2007 Apr, Vol.301, pp.731-734 [Peer Reviewed Journal]

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Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures

Journal of Crystal Growth, April 2007, Vol.301-302, pp.731-734 [Peer Reviewed Journal]

Scopus (Elsevier B.V)

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Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures

Journal of Crystal Growth, 2007, Vol.301, pp.731-734 [Peer Reviewed Journal]

ScienceDirect Journals (Elsevier)

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Electronic properties of self-assembled InAs quantum dots on GaAs surfaces probed by lateral electron tunneling structures

Journal of Crystal Growth, Apr. 2007, Vol.301-302, pp.731-734 [Peer Reviewed Journal]

© ProQuest LLC All rights reserved

No full-text

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