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Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta~2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion

Perez-Tomas, A. et al.

Materials science forum. VOL 527/529; PART 2, ; 2006, 1059-1062 -- Transtec Publications; 1999 (pages 1059-1062) -- 2006

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