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Gate Oxide Stability of 4H-SiC MOSFETs under On/Off-State Bias-Temperature Stress

Tadjer, M.J. et al.

Materials science forum.; Silicon carbide and related materials; Silicon carbide and related materials 2012; selected, peer reviewed papers from the 9th European conference on silicon carbide and related materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation; edited by Alexnder A. Lebedev, Sergey Yu. Davydov, Pavel A. Ivanov and Mikhail E. Levinshtein; St. Petersburg, Russia, 2012; Sep, 2013, 553-556 -- Durnten-Zurich, Switzerland; Trans Tech Publications Ltd; 2013 Part; (pages 553-556) -- 2013

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