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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Lee, K.-J. et al.

IEEE journal of solid-state circuits.; IEEE international solid state circits conference (ISSCC); San Francisco, CA, 2007; Feb, 2008, 150-162 -- IEEE; 2008 (pages 150-162) -- 2008

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