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A 0.1-mum 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Kang, S. et al.

IEEE journal of solid-state circuits.; International solid-state circuits conference; San Francisco, CA, 2006; Feb, 2007, 210-218 -- IEEE,; 2007 Part: Part 1; (pages 210-218) -- 2007

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