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35.5 Novel Transition Layer Engineered Si Nanocrystal Flash Memory with MHSOS Structure Featuring Large V~t~h Window and Fast P/E Speed

Joo, K.-H. et al.

Technical digest / International Electron Devices Meeting.; IEEE international electron devices meeting; Washington, DC, 2005; Dec, 0, 885-888 -- Institute of Electrical and Electronics Engineers; 2005 (pages 885-888)

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