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An enhanced approach to numerical modeling of heavily irradiated silicon devices

Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G. M. MacEvoy, B. C. Hall, G. Placidi, P.; Watts, S.

Nuclear instruments and methods in physics research. Section B, Beam interactions with materials and atoms.; Defect engineering of advanced semiconductor devices; Strasbourg, France, 2001; Jun, 2002, 171-175 -- Elsevier; 2002 (pages 171-175) -- 2002

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