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Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)

AIP Conference Proceedings, 2010, Vol.1292, pp.55-58 [Peer Reviewed Journal]

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  • Title:
    Electrical properties of MOS structures based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid Transport and Chemical-Vapor Deposition on 6H-SiC(0001)
  • Author: Esteve, R. ; Lorenzzi, J. ; Reshanov, S.A. ; Jegenyes, N. ; Schöner, A. ; Ferro, G. ; Zetterling, C.-M.
  • Found In: AIP Conference Proceedings, 2010, Vol.1292, pp.55-58 [Peer Reviewed Journal]
  • Subjects: 3c-Sic ; Interface ; Mos ; Oxides
  • Rights: Copyright 2011 Elsevier B.V., All rights reserved.
  • Description: The electrical properties of post-oxidized PECVD oxides in wet oxygen based on 3C-SiC(111) epilayers grown by Vapor-Liquid-Solid and Chemical-Vapor-Deposition mechanisms on 6H-SiC(0001) have been studied. Different 6H-SiC(0001) samples exhibiting diverse crystal orientations (on-axis, 2 degree off-axis) and growth conditions were regarded. A comparative study of oxide qualities has been carried out via capacitance and conductance measurements (C-G-V). Achieved interface traps densities and effective oxide charges were compared for the different samples. Reliability issues have been considered via current measurements (I-V and TZDB) and statistical data treatment techniques (Weibull plots). Oxides based on 3C-SiC layer grown by a process combining VLS and CVD methods demonstrated low interface states densities Dit of 1.21010 eV-1cm-2 at 0.63 eV below the conduction band and fixed oxide charges Qeff-q estimated to -0.11011 cm-2.
  • Identifier: ISBN: 9780735408470 ; ISSN: 0094243X ; E-ISSN: 15517616 ; DOI: 10.1063/1.3518310

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