skip to main content
Show Results with:

Defects and polytypism in SiC : the role of diffuse X-ray scattering

2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, Vol.1292, pp.43-46 [Peer Reviewed Journal]

No full-text

  • Title:
    Defects and polytypism in SiC : the role of diffuse X-ray scattering
  • Author: Boulle, Alexandre ; Dompoint, Deborah ; Galben-Sandulache, I ; Chaussende, D
  • Found In: 2010 WIDE BANDGAP CUBIC SEMICONDUCTORS: FROM GROWTH TO DEVICES, 2010, Vol.1292, pp.43-46 [Peer Reviewed Journal]
  • Subjects: Sic ; Defects ; Diffuse X-Ray Scattering
  • Language: English
  • Description: Stacking faults (SFs) and the 3C‐6H polytypic transition in thick (001)‐oriented 3C‐SiC crystals are studied by means of diffuse X‐ray scattering. The presence of SFs lying in the {111} planes gives rise to streaked reciprocal lattice points with the streaks being parallel to the <111>...
  • Identifier: DOI: 10.1063/1.3518307

Searching Remote Databases, Please Wait