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Measurement and Analysis of Dynamic Impedance Spectra Acquired During the Oscillatory Electrodissolution of p‐Type Silicon in Fluoride‐Containing Electrolytes

Koster, Dominique

ChemElectroChem: fundamentals & applications, analysis & catalysis, bio & nano, energy & more. Volume 5:Number 12 (2018, June); pp 1548-1551 -- Wiley-VCH

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  • Title:
    Measurement and Analysis of Dynamic Impedance Spectra Acquired During the Oscillatory Electrodissolution of p‐Type Silicon in Fluoride‐Containing Electrolytes
  • Author: Koster, Dominique;
    Patzauer, Maximilian;
    Salman, Munir M.;
    Battistel, Alberto;
    Krischer, Katharina;
    La Mantia, Fabio
  • Found In: ChemElectroChem: fundamentals & applications, analysis & catalysis, bio & nano, energy & more. Volume 5:Number 12 (2018, June); pp 1548-1551
  • Journal Title: ChemElectroChem: fundamentals & applications, analysis & catalysis, bio & nano, energy & more
  • Subjects: Electrochemistry--Periodicals; dynamic impedance spectroscopy--dynamic multifrequency analysis--electrodissolution--oscillatory dynamics--silicon; Dewey: 541.37
  • Rights: Licensed
  • Publication Details: Wiley-VCH
  • Abstract: Abstract:

    Using dynamic multifrequency analysis (DMFA), we investigated the oscillatory reaction dynamics that govern the anodic electrodissolution of p‐type silicon in fluoride‐containing electrolytes, in which the anodization of silicon is followed by the chemical etching of the oxide layer. By applying a constant voltage to the silicon electrode, stable oscillations are found in the presence of an external resistance. The dynamic impedance spectra acquired through DMFA were fitted to a suitable electrical equivalent circuit. In doing so, it was possible to investigate the temporal evolution of the kinetic parameters throughout the formation and dissolution of the silicon oxide.

    Looking into oscillations: By using dynamic multifrequency analysis, we acquire and investigate the impedance spectra of self‐sustained oscillations (see picture) that can emerge during silicon oxidation in fluoride‐containing electrolyte. The impedance spectra could be fitted by a classic Randles circuit. We link the resulting capacitance to the dielectric behavior of SiO2and the resulting Warburg coefficient to diffusion processes in the oxide.


  • Identifier: System Number: ETOCvdc_100090905831.0x000001; Journal ISSN: 2196-0216
  • Publication Date: 2018
  • Physical Description: Electronic
  • Shelfmark(s): 3133.496200
  • UIN: ETOCvdc_100090905831.0x000001

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