skip to main content
Show Results with:

Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Ahn, J. et al.

IEEE Electron device letters. VOL 37; NUMBER 6, ; 2016, 705-708 -- IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS (pages 705-708) -- 2016

Check library holdings

Searching Remote Databases, Please Wait