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n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates

Choi, M. K. et al.

Journal of materials science. Materials in electronics. VOL 20; NUMBER 12, ; 2009, 1214-1218 -- Springer Science + Business Media Part 12; (pages 1214-1218) -- 2009

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  • Title:
    n-ZnO:Ga/i-ZnO/p-Si heterojunction light emitting diodes fabricated on patterned Si substrates
  • Author: Choi, M. K.;
    Han, W. S.;
    Kim, Y. Y.;
    Kong, B. H.;
    Cho, H. K.;
    Kim, J. H.;
    Seo, H. S.;
    Kim, K. P.;
    Lee, J. H.
  • Found In: Journal of materials science. Materials in electronics. VOL 20; NUMBER 12, ; 2009, 1214-1218
  • Journal Title: Journal of materials science. Materials in electronics.
  • Subjects: Electrical and Electronic Engineering; Mechanical Engineering; Civil Engineering; LCC: TK7871; Dewey: 621.381
  • Publication Details: Springer Science + Business Media
  • Language: English
  • Abstract: n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes were fabricated on patterned Si substrates with increased interface area where hole carriers were transported to the i-ZnO layer. The patterned Si substrates were prepared by electrochemical etching, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. In the patterned LED, the lower breakdown and greater leakage current under a reverse bias was attributed to the formation of a high density of grain boundaries and random tilting of the c-axis. Compared to an LED without patterning, the patterned substrates resulted in approximately 75% improvement in the output power of visible emission, which was attributed to a 1.33-fold increase in the heterojunction area and the increase in grain boundary density due to grain tilting.
  • Identifier: Journal ISSN: 0957-4522
  • Publication Date: 2009
  • Physical Description: Electronic
  • Accrual Information: Monthly
  • Shelfmark(s): 5012.257000
  • UIN: ETOCRN258798828

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