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Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering

Ahn, C. H. et al.

Journal of materials science. Materials in electronics. VOL 19; NUMBER 8-9, ; 2008, 744-748 -- Springer Science + Business Media (pages 744-748) -- 2008

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  • Title:
    Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering
  • Author: Ahn, C. H.;
    Kim, Y. Y.;
    Kang, S. W.;
    Kong, B. H.;
    Mohanta, S. K.;
    Cho, H. K.;
    Kim, J. H.;
    Lee, H. S.
  • Found In: Journal of materials science. Materials in electronics. VOL 19; NUMBER 8-9, ; 2008, 744-748
  • Journal Title: Journal of materials science. Materials in electronics.
  • Subjects: Electrical and Electronic Engineering; Mechanical Engineering; Civil Engineering; LCC: TK7871; Dewey: 621.381
  • Publication Details: Springer Science + Business Media
  • Language: English
  • Abstract: The effects of oxygen and argon gas contents on the structural and optical properties of epitaxially grown ZnO thin films on sapphire substrates by radio frequency magnetron sputtering were investigated. The growth rate of ZnO thin film decreases with increase in oxygen gas contents in the gas mixture. The high-resolution x-ray diffraction Formula Not Shown rocking curve and plane-view transmission electron microscopy investigations reveal the presence of a reduced dislocation density in the ZnO thin films with decrease in oxygen/argon flow ratio. However, large density of defects were observed in the boundaries and inside of the micro-hillocks formed on the surface of ZnO thin film grown with pure argon. The increase in oxygen gas ratio resulted in the improvement of optical properties with suppression and red-shift of the deep level emission.
  • Identifier: Journal ISSN: 0957-4522
  • Publication Date: 2008
  • Physical Description: Electronic
  • Accrual Information: Monthly
  • Shelfmark(s): 5012.257000
  • UIN: ETOCRN229264107

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