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A 0.18-mum 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM)

Cho, W. Y. et al.

IEEE journal of solid-state circuits. VOL 40; NUMB 1, ; 2005, 293-300 -- IEEE; 1998 Part: Part 1; (pages 293-300) -- 2005

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  • Title:
    A 0.18-mum 3.0-V 64-Mb Nonvolatile Phase-Transition Random Access Memory (PRAM)
  • Author: Cho, W. Y.;
    Cho, B.-H.;
    Choi, B.-G.;
    Oh, H.-R.;
    Kang, S.;
    K-S.
  • Found In: IEEE journal of solid-state circuits. VOL 40; NUMB 1, ; 2005, 293-300
  • Journal Title: IEEE journal of solid-state circuits.
  • Subjects: LCC: TK7871.85; Dewey: 621 621.3
  • Publication Details: IEEE; 1998
  • Language: English
  • Identifier: Journal ISSN: 0018-9200
  • Publication Date: 2005
  • Physical Description: Physical
  • Accrual Information: Monthly
  • Shelfmark(s): 4362.985500
  • UIN: ETOCRN162721895

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