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Carrier Trapping Effects in a-Si : H p-i-n Solar Cell Structure - a Study of Stability in a-Si : H Solar Cells

Lin, H.

Journal of China University of Science and Technology. VOL 26; NUMBER 2, ; 1996, 137-142 -- CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY Part: Part 2; (pages 137-142) -- 1996

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  • Title:
    Carrier Trapping Effects in a-Si : H p-i-n Solar Cell Structure - a Study of Stability in a-Si : H Solar Cells
  • Author: Lin, H.
  • Found In: Journal of China University of Science and Technology. VOL 26; NUMBER 2, ; 1996, 137-142
  • Journal Title: Journal of China University of Science and Technology.
  • Subjects: Electrical and Electronic Engineering; Mechanical Engineering; Civil Engineering; Mathematics; Dewey: 500 600
  • Publication Details: CHINA UNIVERSITY OF SCIENCE AND TECHNOLOGY
  • Language: Unspecified
  • Identifier: Journal ISSN: 0253-2778
  • Publication Date: 1996
  • Physical Description: Physical
  • Accrual Information: Quarterly
  • Shelfmark(s): 4729.219400
  • UIN: ETOCRN010119145

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