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Subthreshold slope in polycrystalline silicon thin-film transistors and effect of the gate oxide on the subthreshold characteristics

Dimitriadis, C. A.

Applied physics letters. VOL 67; NUMBER 25, ; 1995, 3738-3740 -- AMERICAN INSTITUTE OF PHYSICS Part: Part 25; (pages 3738-3740) -- 1995

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  • Title:
    Subthreshold slope in polycrystalline silicon thin-film transistors and effect of the gate oxide on the subthreshold characteristics
  • Author: Dimitriadis, C. A.
  • Found In: Applied physics letters. VOL 67; NUMBER 25, ; 1995, 3738-3740
  • Journal Title: Applied physics letters.
  • Subjects: Electrical and Electronic Engineering; Mechanical Engineering; Civil Engineering; LCC: QC1 QC; Dewey: 621
  • Publication Details: AMERICAN INSTITUTE OF PHYSICS
  • Language: English
  • Abstract: A simple expression for the inverse subthreshold slope in polycrystalline silicon thin-film transistors (TFTs) is derived as a function of the gate voltage and with parameters the trapping states at the grain boundaries, the grain size, and the gate oxide. Comparison with the experimental result verifies the validity of the derived expression. We show that in polysilicon TFTs, even with high trapping states density and small grain size, excellent subthreshold characteristics can be obtained by scaling down the SiO~2 thickness to 10 nm. Further improvement in the subthreshold characteristics can be achieved using as gate oxide a Si~3N~4/SiO~2 bilayer of thickness 10 nm which has higher dielectric constant, exhibits good interface properties with polysilicon and serves as a diffusion barrier to avoid penetration effects of impurities through the oxide.
  • Identifier: Journal ISSN: 0003-6951
  • Publication Date: 1995
  • Physical Description: Physical
  • Shelfmark(s): 1576.400000
  • UIN: ETOCRN000967324

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