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A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput

Lee, K.-J. et al.

IEEE journal of solid-state circuits.; IEEE international solid state circits conference (ISSCC); San Francisco, CA, 2007; Feb, 2008, 150-162 -- IEEE; 2008 (pages 150-162) -- 2008

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  • Title:
    A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput
  • Author: Lee, K.-J.;
    Cho, B.-H.;
    Cho, W.-Y.;
    Kang, S.;
    Choi, B.-G.;
    Oh, H.-R.;
    Lee, C.-S.;
    Kim, H.-J.;
    Park, J.-M.;
    Wang, Q.
  • Found In: IEEE journal of solid-state circuits.; IEEE international solid state circits conference (ISSCC); San Francisco, CA, 2007; Feb, 2008, 150-162
  • Conference Title: IEEE journal of solid-state circuits.
  • Subjects: ISSCC; IEEE; Solid state circuits
  • Publication Details: IEEE; 2008
  • Language: English
  • Place Name: San Francisco, CA
  • Identifier: Journal ISSN: 0018-9200
  • Publication Date: 2008
  • Physical Description: Physical
  • Shelfmark(s): 4362.985500
  • UIN: ETOCCN067811378

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