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A 0.1-mum 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

Kang, S. et al.

IEEE journal of solid-state circuits.; International solid-state circuits conference; San Francisco, CA, 2006; Feb, 2007, 210-218 -- IEEE,; 2007 Part: Part 1; (pages 210-218) -- 2007

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  • Title:
    A 0.1-mum 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation
  • Author: Kang, S.;
    Cho, W. Y.;
    Cho, B.-H.;
    Lee, K.-J.;
    Lee, C.-S.;
    Oh, H.-R.;
    Choi, B.-G.;
    Wang, Q.;
    Kim, H.-J.;
    Park, M.-H.
  • Found In: IEEE journal of solid-state circuits.; International solid-state circuits conference; San Francisco, CA, 2006; Feb, 2007, 210-218
  • Conference Title: IEEE journal of solid-state circuits.
  • Subjects: Solid-state circuits; ISSCC
  • Publication Details: IEEE,; 2007
  • Language: English
  • Place Name: San Francisco, CA
  • Description: For more selected papers see same s/m 4362.985500 VOL 41 NUMB 12 2006
  • Identifier: Journal ISSN: 0018-9200
  • Publication Date: 2007
  • Physical Description: Physical
  • Shelfmark(s): 4362.985500
  • UIN: ETOCCN063370951

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