skip to main content
Show Results with:

11.4 Nanoelectromechanical DRAM for Ultra-Large-Scale Integration (ULSI)

Jang, J. E. et al.

Technical digest / International Electron Devices Meeting.; IEEE international electron devices meeting; Washington, DC, 2005; Dec, 0, 269-272 -- Institute of Electrical and Electronics Engineers; 2005 (pages 269-272)

Check library holdings

  • Title:
    11.4 Nanoelectromechanical DRAM for Ultra-Large-Scale Integration (ULSI)
  • Author: Jang, J. E.;
    Cha, S. N.;
    Choi, Y.;
    Butler, T. P.;
    Kang, D. J.;
    Hasko, D. G.;
    Jung, J. E.;
    Kim, J. M.;
    Amaratunga, G. A. J.
  • Found In: Technical digest / International Electron Devices Meeting.; IEEE international electron devices meeting; Washington, DC, 2005; Dec, 0, 269-272
  • Conference Title: Technical digest / International Electron Devices Meeting.
  • Subjects: Electron devices; IEEE; IEDM
  • Publication Details: Institute of Electrical and Electronics Engineers; 2005
  • Language: English
  • Place Name: Washington, DC
  • Description: Also known as IEDM. IEEE cat no : 05CH37703.
  • Identifier: Conference ISBN: 078039268X
  • Publication Date: 0
  • Physical Description: Physical
  • Shelfmark(s): 4539.899000
  • UIN: ETOCCN059776240

Searching Remote Databases, Please Wait