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Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

Mathew, S. et al.

Thin solid films.; International conference on materials for advanced technologies; ICMAT 2003; Singapore, 2003; Dec, 2004, 11-14 -- Elsevier,; 2004 (pages 11-14) -- 2004

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  • Title:
    Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs
  • Author: Mathew, S.;
    Bera, L. K.;
    Balasubramanian, N.;
    Joo, M. S.;
    Cho, B. J.;
    Zhang, D. H.;
    Mhaisalkar, S. G.
  • Found In: Thin solid films.; International conference on materials for advanced technologies; ICMAT 2003; Singapore, 2003; Dec, 2004, 11-14
  • Conference Title: Thin solid films.
  • Subjects: Advanced technologies; Materials; ICMAT
  • Publication Details: Elsevier,; 2004
  • Language: English
  • Place Name: Singapore
  • Description: Contains: Symposium L: advances in materials for si microelectronics-from processing to packaging
  • Identifier: Journal ISSN: 0040-6090
  • Publication Date: 2004
  • Physical Description: Physical
  • Shelfmark(s): 8820.120000
  • UIN: ETOCCN052998322

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