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Mobility Characterization of p-Type and n-Type Strained Si~1~-~x~-~yGe~xC~y/Si Epilayer Hall Devices

Peterson, J. J. et al.

Materials Research Society symposia proceedings.; III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics; Boston; MA, 1998; Nov, 1999, 293-298 -- Warrendale, PA; Materials Research Society; 1999 (pages 293-298) -- 1999

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  • Title:
    Mobility Characterization of p-Type and n-Type Strained Si~1~-~x~-~yGe~xC~y/Si Epilayer Hall Devices
  • Author: Peterson, J. J.;
    Hunt, C. E.;
    Zappe, S. F.;
    Obermeier, E.;
    Ringel, S. A.
  • Found In: Materials Research Society symposia proceedings.; III-V and IV-IV materials and processing challenges for highly integrated microelectronics and optoelectronics; Boston; MA, 1998; Nov, 1999, 293-298
  • Conference Title: Materials Research Society symposia proceedings.
  • Subjects: highly integrated microelectronics; microelectronics; optoelectronics; MRS
  • Publication Details: Warrendale, PA; Materials Research Society; 1999
  • Language: English
  • Place Name: Boston; MA
  • Description: Contains papers from two symposia, symposium D entitled "Integration of dissimilar materials in micro- and optoelectronics" and symposium I entitled "III-V and SiGe group IV device/IC processing challenges for commercial applications", held during the 1998 MRS Fall meeting
  • Identifier: Journal ISSN: 0272-9172
    Conference ISBN: 1558994416
  • Publication Date: 1999
  • Physical Description: Physical
  • Shelfmark(s): 5396.412000
  • UIN: ETOCCN032188966

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