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Delamination of thin Si layer in the H^+ implanted SI for the manufacture of SOI Si wafer - fundamental phenomena and the properties of the delaminated Si layers (invited)

Hara, T.; Zhang, M.; Tu, K.-M.

INTERNATIONAL CONFERENCE ON SOLID STATE AND INTEGRATED CIRCUIT TECHNOLOGY.; International conference on solid-state and integrated circuit technology; Beijing, 1998; Oct, 1998, 753-756 -- IEEE Press; Publishing House of Electronics Industry; 1998 (pages 753-756) -- 1998

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  • Title:
    Delamination of thin Si layer in the H^+ implanted SI for the manufacture of SOI Si wafer - fundamental phenomena and the properties of the delaminated Si layers (invited)
  • Author: Hara, T.;
    Zhang, M.;
    Tu, K.-M.
  • Found In: INTERNATIONAL CONFERENCE ON SOLID STATE AND INTEGRATED CIRCUIT TECHNOLOGY.; International conference on solid-state and integrated circuit technology; Beijing, 1998; Oct, 1998, 753-756
  • Conference Title: INTERNATIONAL CONFERENCE ON SOLID STATE AND INTEGRATED CIRCUIT TECHNOLOGY.
  • Subjects: solid state technology; integrated circuit technology; IEEE; ICSICT
  • Publication Details: IEEE Press; Publishing House of Electronics Industry; 1998
  • Language: English
  • Place Name: Beijing
  • Description: Also known as ICSICT'98. IEEE Cat no 98EX105
  • Identifier: Conference ISBN: 0780343069; 0780343077; 7505350684
  • Publication Date: 1998
  • Physical Description: Physical
  • Shelfmark(s): 4538.885130
  • UIN: ETOCCN032135054

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