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Experimental and Theoretical Analysis of the Hall-Mobility in n-Type Bulk 6H- and 4H-SiC

Mueller, S. G. et al.

Materials Research Society symposia proceedings.; Wide-bandgap semiconductors for high-power, high-frequency and high temperature applications; San Francisco; CA, 1999; Apr, 1999, 275-280 -- Warrendale, PA; Materials Research Society; 1999 (pages 275-280) -- 1999

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  • Title:
    Experimental and Theoretical Analysis of the Hall-Mobility in n-Type Bulk 6H- and 4H-SiC
  • Author: Mueller, S. G.;
    Hofmann, D.;
    Winnacker, A.;
    Binari, S. C.
  • Found In: Materials Research Society symposia proceedings.; Wide-bandgap semiconductors for high-power, high-frequency and high temperature applications; San Francisco; CA, 1999; Apr, 1999, 275-280
  • Conference Title: Materials Research Society symposia proceedings.
  • Subjects: wide-bandgap semiconductors; high-power applications; materials research; MRS
  • Publication Details: Warrendale, PA; Materials Research Society; 1999
  • Language: English
  • Place Name: San Francisco; CA
  • Description: Held as part of the MRS Spring meeting
  • Identifier: Journal ISSN: 0272-9172
    Conference ISBN: 1558994793
  • Publication Date: 1999
  • Physical Description: Physical
  • Shelfmark(s): 5396.412000
  • UIN: ETOCCN032117052

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