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Current Status of SiC Power Switching Devices: Diodes and GTOs

Seshadri, S. et al.

Materials Research Society symposia proceedings.; Wide-bandgap semiconductors for high-power, high-frequency and high temperature applications; San Francisco; CA, 1999; Apr, 1999, 23-32 -- Warrendale, PA; Materials Research Society; 1999 (pages 23-32) -- 1999

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  • Title:
    Current Status of SiC Power Switching Devices: Diodes and GTOs
  • Author: Seshadri, S.;
    Agarwal, A. K.;
    Hall, W. B.;
    Mani, S. S.;
    Binari, S. C.
  • Found In: Materials Research Society symposia proceedings.; Wide-bandgap semiconductors for high-power, high-frequency and high temperature applications; San Francisco; CA, 1999; Apr, 1999, 23-32
  • Conference Title: Materials Research Society symposia proceedings.
  • Subjects: wide-bandgap semiconductors; high-power applications; materials research; MRS
  • Publication Details: Warrendale, PA; Materials Research Society; 1999
  • Language: English
  • Place Name: San Francisco; CA
  • Description: Held as part of the MRS Spring meeting
  • Identifier: Journal ISSN: 0272-9172
    Conference ISBN: 1558994793
  • Publication Date: 1999
  • Physical Description: Physical
  • Shelfmark(s): 5396.412000
  • UIN: ETOCCN032116659

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