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Effect of Metal Nitride on Contact Resistivity of Metal-Interlayer-Ge Source/Drain in Sub-10-nm n-Type Ge FinFET

Ahn, J. et al.

IEEE Electron device letters. VOL 37; NUMBER 6, ; 2016, 705-708 -- IEEE INSTITUTE OF ELECTRICAL AND ELECTRONICS (pages 705-708) -- 2016

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