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On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy

Balmer, R. S. et al.

Physica status solidi. C, Conferences and critical reviews. VOL 3; NUMBER 6, ; 2006, 1429-1434 -- John Wiley & Sons, Ltd (pages 1429-1434) -- 2006

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  • Title:
    On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy
  • Author: Balmer, R. S.;
    Soley, D. E.;
    Simons, A. J.;
    Mace, J. D.;
    Koker, L.;
    Jackson, P. O.;
    Wallis, D. J.;
    Uren, M. J.;
    Martin, T.
  • Found In: Physica status solidi. C, Conferences and critical reviews. VOL 3; NUMBER 6, ; 2006, 1429-1434
  • Journal Title: Physica status solidi. C, Conferences and critical reviews.
  • Subjects: Electrical and Electronic Engineering; Mechanical Engineering; Civil Engineering; LCC: QC; Dewey: 530
  • Publication Details: John Wiley & Sons, Ltd
  • Language: English
  • Abstract: We report an investigation of the incorporation mechanism of iron (Fe) as a dopant in GaN grown by MOVPE. A series of Fe doped GaN structures were studied by secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM) and X-ray photo-electron spectroscopy (XPS). A model is presented which describes the SIMS concentration profiles with excellent agreement, and, it is shown that Fe incorporation into GaN occurs via a surface segregation mechanism. This model is supported by direct measurement of a highly Fe-rich layer on the surface of Fe doped GaN by XPS. Furthermore, we find that the presence of Fe on the GaN surface promotes a transition from 2D to 3D GaN growth which is confirmed by AFM measurements of RMS roughness with increasing Fe flux. (Copyright 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
  • Identifier: Journal ISSN: 1610-1634
  • Publication Date: 2006
  • Physical Description: Electronic
  • Accrual Information: Monthly
  • Shelfmark(s): 6475.235000
  • UIN: ETOCRN188987471

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