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Hole and Electron Trapping Effects in Hydrogenated Amorphous Silicon (à-Si:H)-A Study of Stability of PIN Solar Cells

Lin, H.

RESEARCH AND PROGRESS OF SSE. VOL 14; NUMBER 2, ; 1994, 127 -- NEDI - CHINA Part: Part 2; -- 1994

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  • Title:
    Hole and Electron Trapping Effects in Hydrogenated Amorphous Silicon (à-Si:H)-A Study of Stability of PIN Solar Cells
  • Author: Lin, H.
  • Found In: RESEARCH AND PROGRESS OF SSE. VOL 14; NUMBER 2, ; 1994, 127
  • Journal Title: RESEARCH AND PROGRESS OF SSE.
  • Subjects: Electrical and Electronic Engineering; Mechanical Engineering; Civil Engineering; Dewey: 621.38
  • Publication Details: NEDI - CHINA
  • Identifier: Journal ISSN: 1000-3819
  • Publication Date: 1994
  • Physical Description: Physical
  • Accrual Information: Quarterly
  • Shelfmark(s): 7715.701000
  • UIN: ETOCEN018916058

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